aug. 1999 pin configuration mitsubishi semiconductor M63800FP 7-unit 500ma source type darlington transistor array with clamp diode description M63800FP is a seven-circuit output-sourcing darlington transistor array. the circuits are made of pnp and npn tran- sistors. this semiconductor integrated circuit performs high- current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (io(max) = C500ma) with output clamping diodes driving available with cmos ic output of 6-16v or with ttl output wide operating temperature range (ta = C20 to +75 c) output current-sourcing type application drives of relays, printers, leds, fluorescent display tubes and lamps, and interfaces between mos-bipolar logic sys- tems and relays, solenoids, or small motors function the M63800FP has seven circuits, which are made of input inverters and current-sourcing outputs. the outputs are made of pnp transistors and npn darlington transistors. the pnp transistor base current is constant. a spike-killer clamping diode is provided between each output pin and gnd. v s (pin 8) and gnd (pin 9) are used commonly among the eight circuits. the input has resistance of 3k w , and a maximum of 10v can be applied. the output current is 500ma maximum. supply voltage v s is 50v maximum. the M63800FP is enclosed in a molded small flat package, enabling space-saving design. circuit diagram C0.5 ~ +50 50 C0.5 ~ +10 C500 C500 50 1.00 C20 ~ +75 C55 ~ +125 # : unused i/o pins must be connected to gnd. absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) v ceo # v s v i i o i f v r # p d t opr t stg ratings symbol parameter conditions collector-emitter voltage supply voltage input voltage output current clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature output, l current per circuit output, h ta = 25 c, when mounted on board 1.5k 7.2k 3k 3k 20k v s gnd input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the v s and gnd. 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? gnd v s 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? input output package type 16p2n-a v v v ma ma v w c c unit
aug. 1999 mitsubishi semiconductor M63800FP 7-unit 500ma source type darlington transistor array with clamp diode recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) i s (leak) # i s v f i r # 5 0 2.4 0 v v v 50 10 0.2 i o 0 0 C350 C100 ma v ce (sat) i i 100 2.4 2.0 1.0 5.0 15.0 C2.4 100 v s = 50v, v i = 0.2v v s = 10v, v i = 2.4v, i o = C350ma v s = 10v, v i = 2.4v, i o = C100ma v i = 3v v i = 10v v s = 50v, v i = 3v (all input) i f = C350ma v r = 50v symbol unit parameter test conditions limits min typ + max 1.6 1.45 0.6 2.9 5.6 C1.2 + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. # : unused i/o pins must be connected to gnd. m a ma v m a v ma v s v ih v il min typ max parameter limits symbol unit supply voltage output current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) h input voltage l input voltage duty cycle no more than 40% duty cycle no more than 7% electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) supply leak current supply current clamping diode forward voltage clamping diode reverse current collector-emitter saturation voltage input current timing diagram note 1 test circuit ns ns t on t off 100 4800 symbol unit parameter test conditions limits min typ max turn-on time turn-off time c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) ton 50% 50% 50% 50% toff input output pg 50 w c l r l v s input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 0 to 2.4v (2) input-output conditions : r l = 30 w , v s = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device
aug. 1999 mitsubishi semiconductor M63800FP 7-unit 500ma source type darlington transistor array with clamp diode typical characteristics thermal derating factor characteristics ambient temperature ta (?) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 v s = 10v v i = 2.4v ta = 75? ta = 25? ta = ?0? output saturation voltage output current characteristics output saturation voltage v ce (sat) (v) 0 0 ?00 ?00 ?00 ?00 ?00 0.5 1.0 1.5 2.0 2.5 output current i o (ma) duty-cycle-output current characteristics duty cycle (%) 0 0 ?00 ?00 ?00 ?00 ?00 a ? ? ? ? 20 40 60 80 100 output current i o (ma) input voltage v i (v) 0 0 ?00 ?00 ?00 ?00 ?00 0.2 0.4 0.6 0.8 1.0 output current i o (ma) duty cycle (%) 0 0 ?00 ?00 ?00 ?00 ?00 a ? ? ? ? 20 40 60 80 100 output current i o (ma) forward bias voltage v f (v) 0 0.5 1.0 1.5 0 500 400 300 200 100 2.0 forward bias current i f (ma) duty-cycle-output current characteristics grounded emitter transfer characteristics clamping diode characteristics v s = 20v v s -v o = 4v ta = 75? ta = 25? ta = ?0? ta = 75? ta = 25? ta = ?0? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
aug. 1999 mitsubishi semiconductor M63800FP 7-unit 500ma source type darlington transistor array with clamp diode input characteristics input voltage v i (v) 0 0.4 0.2 0.6 0.8 1.0 0 12345 input current i i (ma) input characteristics input voltage v i (v) 0 2 1 3 4 5 0 246810 input current i i (ma) v s = 20v ta = 75? ta = 25? ta = ?0? v s = 20v ta = 75? ta = 25? ta = ?0?
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